CPV363M4K pd-5.043a short circuit rated ultrafast igbt igbt sip module features description 3 6 71319 18 15 10 16 4 9 12 d1 d3 d5 d2 d4 d6 q1 q2 q3 q4 q5 q6 1 output current in a typical 20 khz motor drive product summary ? short circuit rated ultrafast: optimized for high operating frequencies >5.0 khz , and short circuit rated to 10s @ 125c, v ge = 15v ? fully isolated printed circuit board mount package ? switching-loss rating includes all "tail" losses ? hexfred tm soft ultrafast diodes ? optimized for high operating frequency (over 5khz) see fig. 1 for current vs. frequency curve 6.7 a rms per phase (1.94 kw total) with t c = 90c, t j = 125c, supply voltage 360vdc, power factor 0.8, modulation depth 115% (see figure 1) the igbt technology is the key to international rectifier's advanced line of ims (insulated metal substrate) power modules. these modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power mosfet. this superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. this package is highly suited to motor drive applications and where space is at a premium. 2/24/98 ims-2 parameter typ. max. units r q jc (igbt) junction-to-case, each igbt, one igbt in conduction CCC 3.5 r q jc (diode) junction-to-case, each diode, one diode in conduction CCC 5.5 c/w r q cs (module) case-to-sink, flat, greased surface 0.1 CCC wt weight of module 20 (0.7) CCC g (oz) thermal resistance parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current, each igbt 11 i c @ t c = 100c continuous collector current, each igbt 6.0 i cm pulsed collector current ? 22 a i lm clamped inductive load current ? 22 i f @ t c = 100c diode continuous forward current 6.1 i fm diode maximum forward current 22 t sc short circuit withstand time 10 s v ge gate-to-emitter voltage 20 v v isol isolation voltage, any terminal to case, 1 minute 2500 v rms p d @ t c = 25c maximum power dissipation, each igbt 36 w p d @ t c = 100c maximum power dissipation, each igbt 14 t j operating junction and -40 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 5-7 lbf?in (0.55 - 0.8 n?m) absolute maximum ratings
CPV363M4K parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage ? 600 CCC CCC v v ge = 0v, i c = 250a d v (br)ces / d t j temp. coeff. of breakdown voltage CCC 0.45 CCC v/c v ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage CCC 1.72 2.10 i c = 6.0a v ge = 15v CCC 2.00 CCC v i c = 11a see fig. 2, 5 CCC 1.60 CCC i c = 6.0a, t j = 150c v ge(th) gate threshold voltage 3.0 CCC 6.0 v ce = v ge , i c = 250a d v ge(th) / d t j temp. coeff. of threshold voltage CCC -13 CCC mv/c v ce = v ge , i c = 250a g fe forward transconductance ? 3.0 6.0 CCC s v ce = 100v, i c = 12a i ces zero gate voltage collector current CCC CCC 250 a v ge = 0v, v ce = 600v CCC CCC 2500 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop CCC 1.4 1.7 v i c = 12a see fig. 13 CCC 1.3 1.6 i c = 12a, t j = 150c i ges gate-to-emitter leakage current CCC CCC 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) ? repetitive rating; v ge =20v, pulse width limited by max. junction temperature. ( see fig. 20) notes: ? pulse width 5.0s, single shot. ? v cc =80%(v ces ), v ge =20v, l=10h, r g = 23 w , ( see fig. 19 ) ? pulse width 80s; duty factor 0.1%. parameter min. typ. max. units conditions q g total gate charge (turn-on) CCC 61 91 i c = 6a q ge gate - emitter charge (turn-on) CCC 7.4 11 nc v cc = 400v q gc gate - collector charge (turn-on) CCC 27 40 see fig. 8 t d(on) turn-on delay time CCC 55 CCC t j = 25c t r rise time CCC 24 CCC ns i c = 6.0a, v cc = 480v t d(off) turn-off delay time CCC 107 160 v ge = 15v, r g = 23 w t f fall time CCC 92 140 energy losses include "tail" and e on turn-on switching loss CCC 0.28 CCC diode reverse recovery. e off turn-off switching loss CCC 0.10 CCC mj see fig. 9, 10, 18 e ts total switching loss CCC 0.39 0.50 t sc short circuit withstand time 10 CCC CCC s v cc = 360v, t j = 125c v ge = 15v, r g = 23 w , v cpk < 500v t d(on) turn-on delay time CCC 54 CCC t j = 150c, see fig.10, 11, 18 t r rise time CCC 24 CCC ns i c = 6.0a, v cc = 480v t d(off) turn-off delay time CCC 161 CCC v ge = 15v, r g = 23 w t f fall time CCC 244 CCC energy losses include "tail" and e ts total switching loss CCC 0.60 CCC mj diode reverse recovery. c ies input capacitance CCC 740 CCC v ge = 0v c oes output capacitance CCC 100 CCC pf v cc = 30v see fig. 7 c res reverse transfer capacitance CCC 9.3 CCC ? = 1.0mhz t rr diode reverse recovery time CCC 42 60 ns t j = 25c see fig. CCC 80 120 t j = 125c 14 i f = 12a i rr diode peak reverse recovery current CCC 3.5 6.0 a t j = 25c see fig. CCC 5.6 10 t j = 125c 15 v r = 200v q rr diode reverse recovery charge CCC 80 180 nc t j = 25c see fig. CCC 220 600 t j = 125c 16 di/dt=200a/s d i (rec)m / dt diode peak rate of fall of recovery CCC 180 CCC a/s t j = 25c see fig. during t b CCC 120 CCC t j = 125c 17 switching characteristics @ t j = 25c (unless otherwise specified)
CPV363M4K fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 0.1 1 10 100 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20 s pulse width ge t = 25 c j o t = 150 c j o 0.1 1 10 100 5 10 15 v , gate-to-emitter volta g e ( v ) i , collector-to-emitter current (a) ge c v = 50v 5 s pulse width cc t = 25 c j o t = 150 c j o 0.1 1 10 100 0 2 4 6 8 10 12 f, frequenc y (khz) load current (a) tc = 90c tj = 125c power factor = 0.8 modulation d epth = 1.15 vcc = 50% of rated voltage total output power (kw) 2.92 2.33 1.75 1.17 0.58 0.00 3.50
CPV363M4K fig. 4 - maximum collector current vs. case temperature fig. 6 - maximum igbt effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t , r ectangular pulse d uration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 sin gle pu lse (thermal response) t herm al respo nse (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 12 j dm thjc c -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 12 c i = a 6 c i = a 3 c 0 3 6 9 12 25 50 75 100 125 150 maxim um dc collector c urrent (a) t , case temperature ( c ) c v = 1 5 v ge a
CPV363M4K fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature r g , gate resistance ( w ) 10 w 1 10 100 0 300 600 900 1200 1500 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res 0 10 20 30 40 50 0.0 0.2 0.4 0.6 0.8 1.0 r , gate resistance ( ohm ) total switching losses (mj) g v = 480v v = 15v t = 25 c i = 6.0a cc ge j c -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 t , junction temperature ( c ) total switching losses (mj) j r = 23ohm v = 15v v = 480v g ge cc i = a 12 c i = a 6 c i = a 3 c w 0 20 40 60 80 0 4 8 12 16 20 q , total gate char g e ( nc ) v , gate-to-emitter voltage (v) g ge v = 400v i = 6.0a cc c
CPV363M4K fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa fig. 13 - maximum forward voltage drop vs. instantaneous forward current 10 w 1 10 100 1 10 100 1000 c ce i , collector-to-em itter current (a) safe operating area v = 2 0 v t = 12 5 c ge j v , collector-to-em itter volta g e ( v ) a 1 10 100 0.4 0.8 1.2 1.6 2.0 2.4 fm f instantaneous forward current - i (a) forward volta g e drop - v ( v ) t = 150c t = 125c t = 25c j j j 0 3 6 9 12 15 0.0 0.3 0.6 0.9 1.2 1.5 i , collector-to-emitter current (a) total switching losses (mj) c r = 23ohm t = 150 c v = 0v v = 15v g j cc ge w 480v
CPV363M4K fig. 14 - typical reverse recovery vs. di f /dt fig. 15 - typical recovery current vs. di f /dt fig. 16 - typical stored charge vs. di f /dt fig. 17 - typical di (rec)m /dt vs. di f /dt 0 200 400 600 100 1000 f di /d t - ( a/ s ) rr q - (nc) i = 6.0a i = 12a i = 24 a v = 200v t = 125c t = 25c r j j f f f 10 100 1000 10000 100 1000 f di /dt - ( a/ s ) di(rec)m/dt - (a/s) i = 12 a i = 24a i = 6.0a f f f v = 200v t = 125c t = 25c r j j 0 40 80 120 160 100 1000 f di /d t - ( a/ s ) t - (n s) rr i = 24a i = 12 a i = 6.0a f f f v = 200v t = 125c t = 25c r j j 1 10 100 100 1000 f di /d t - ( a/ s ) i - (a) irrm i = 6 .0a i = 12 a i = 24 a f f f v = 200v t = 125c t = 25c r j j
CPV363M4K same type device as d.u.t. d.u.t. 430f 80% of vce fig. 18a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1 +5 s vce ic dt 90% vge +vge eoff = fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vcc trr q rr = trr tx id dt fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr vd ic dt vce ic dt ic dt vce ic dt
CPV363M4K vg gate signal device under tes t current d.u.t. vol tage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19. clamped inductive load test circuit figure 20. pulsed collector current test circuit r l = 480v 4 x i c @25c 0 - 480v figure 18e. macro waveforms for figure 18a's test circuit
CPV363M4K case outline ? ims-2 notes: ? repetitive rating: v ge =20v; pulse width limited by maximum junction temperature (figure 20) ? v cc =80 %( v ces ), v ge =20v, l=10h, r g = 10 w (figure 19) ? pulse width 80s; duty factor 0.1% . ? pulse width 5.0s, single shot. world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 2/98 d im ens ion s in m illim ete rs and (inc he s) ims-2 package outline (13 pins) 7.87 (.310) 5.46 (.215) 1.27 (.050) 6.10 (.240) 3.05 0.38 (.120 .015) 0.51 (.020) 0.38 (.015) 62.43 (2.458) 53.85 (2.120) 3.91 (.154) 2x 21.97 (.865) 3.94 (.155) 4.06 0.51 (.160 .020) 5.08 (.200) 6x 1.27 (.050) 13x 2.54 (.100) 6x 0.76 (.030) 13x 1 2 3 4 5 6 7 8 9 10 1 1 1 2 13 14 1 5 1 6 17 18 19 notes: 1. tolerance unless otherwise specified 0.254 (.010). 2. controlling d imension: inch. 3. dimensions are shown in millimeter (inches). 4. terminal numbers are shown for refer enc e only.
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